Low-Dielectric Constant Materials II: Volume 443André Lagendijk Low-dielectric constant materials are needed to improve the performance and speed of future integrated circuits. In fact, the diversity of contributors to this book is testimony to the global significance of the topic to the future of semiconductor manufacturing. Presentations include those by semiconductor equipment manufacturers and chemical source suppliers, academia from six countries, four government laboratories and five major device manufacturers. Approaches to designing and implementing reduction in dielectric constant for intermetal dielectric materials are featured and range from the evolution of silicon dioxide to fluorinated silicate glass, to the use of inorganic/organic polymers and spin-on-material, to fluorinated diamond-like carbon and nanoporous silica. The book also addresses the practical aspects of the use of low-dielectric constant materials such as chemical mechanical polishing of these materials and optimization of wiring delays in devices utilizing low-k material. |
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB Phys planarization plasma polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films