Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 15
Page 149
... films ( SiOF ) was found to be dependent on F content and the type of substrate upon which the film was deposited . SiOF films with a range of F concentrations were deposited using an electron cyclotron resonance ( ECR ) plasma upon Si ...
... films ( SiOF ) was found to be dependent on F content and the type of substrate upon which the film was deposited . SiOF films with a range of F concentrations were deposited using an electron cyclotron resonance ( ECR ) plasma upon Si ...
Page 150
... SiOF deposited layer was 0.15 to 0.19 μm thick , and all measurements were taken approx . 2 to 14 days after film deposition and unloading ( outside the deposition system , the ... SiOF films . 11 % F content SiOF layer on Al / Si 150.
... SiOF deposited layer was 0.15 to 0.19 μm thick , and all measurements were taken approx . 2 to 14 days after film deposition and unloading ( outside the deposition system , the ... SiOF films . 11 % F content SiOF layer on Al / Si 150.
Page 152
... SiOF / AI / Si annealed 300 ° C 11 % F -2.7 % SiOF / AI / Si annealed 350 ° C 11 % F SiOF / Al / Si annealed 400 ° C -2.7 % films may be a result of either the formation of a void beneath the metal contact of a size too small to be ...
... SiOF / AI / Si annealed 300 ° C 11 % F -2.7 % SiOF / AI / Si annealed 350 ° C 11 % F SiOF / Al / Si annealed 400 ° C -2.7 % films may be a result of either the formation of a void beneath the metal contact of a size too small to be ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber