Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 111
... alloys . INTRODUCTION There is considerable interest in insulating films with static dielectric constants , es , lower than SiO2 . One alloy system that has attracted considerable attention is Si - O - F . This paper ( i ) reviews the ...
... alloys . INTRODUCTION There is considerable interest in insulating films with static dielectric constants , es , lower than SiO2 . One alloy system that has attracted considerable attention is Si - O - F . This paper ( i ) reviews the ...
Page 113
... alloys : ( a ) IR spectra from 400 to 4000 cm - 1 for alloy with 11.7 at . % F ; ( b ) expanded spectrum in the range of the Si - F bond - stretching feature ( 940 cm - 1 ) and the Si - O - Si bond - bending mode ( 815 cm - 1 ) for alloy ...
... alloys : ( a ) IR spectra from 400 to 4000 cm - 1 for alloy with 11.7 at . % F ; ( b ) expanded spectrum in the range of the Si - F bond - stretching feature ( 940 cm - 1 ) and the Si - O - Si bond - bending mode ( 815 cm - 1 ) for alloy ...
Page 118
... alloys is related to Si - F bonding , predominantly near - neighbor Si - F groups ; and ( vi ) there are no other inorganic dielectrics based on alloy formation with SiO2 that can yield lower values of Ɛs , so that the alloy approach to ...
... alloys is related to Si - F bonding , predominantly near - neighbor Si - F groups ; and ( vi ) there are no other inorganic dielectrics based on alloy formation with SiO2 that can yield lower values of Ɛs , so that the alloy approach to ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber