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Contents
16 other sections not shown Common terms and phrasesa-C:F film adhesion alloy ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking CTAC/TEOS cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing indicates integrated interface ISBN low dielectric constant low-k Materials Research Society measured mechanical metal moisture absorption monomers Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene parylene AF-4 peak PECVD PFCB Phys planarization plasma polyimide polyimide film polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance rf power sample semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spectroscopy spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer xerogel References from web pagesMethod and apparatus for cleaning low K dielectric and metal wafer ... 0018-8646/99/$5.00 (C) 1999 IBM Plasma-assisted chemical vapor ... Bibliographic information |