Low-Dielectric Constant Materials II:
H. Treichel, A. C. Jones, A. Lagendijk, K. Uram
Materials Research Society, Aug 19, 1997 - Technology & Engineering - 203 pages
Low-dielectric constant materials are needed to improve the performance and speed of future integrated circuits. In fact, the diversity of contributors to this book is testimony to the global significance of the topic to the future of semiconductor manufacturing. Presentations include those by semiconductor equipment manufacturers and chemical source suppliers, academia from six countries, four government laboratories and five major device manufacturers. Approaches to designing and implementing reduction in dielectric constant for intermetal dielectric materials are featured and range from the evolution of silicon dioxide to fluorinated silicate glass, to the use of inorganic/organic polymers and spin-on-material, to fluorinated diamond-like carbon and nanoporous silica. The book also addresses the practical aspects of the use of low-dielectric constant materials such as chemical mechanical polishing of these materials and optimization of wiring delays in devices utilizing low-k material.
33 pages matching fluorine in this book
Results 1-3 of 33
What people are saying - Write a review
towDielectric Constant Materials for IC Intermetal
A Study of Anisotropy of Spin Cast and VaporDeposited
A Low eR Material Candidate for ULSI
16 other sections not shown
Method and apparatus for cleaning low K dielectric and metal wafer ...
Method and apparatus for cleaning low K dielectric and metal wafer surfaces - US Patent 6319330 from Patent Storm. Provided is a method for cleaning ...
www.patentstorm.us/ patents/ 6319330.html
0018-8646/99/$5.00 (C) 1999 IBM Plasma-assisted chemical vapor ...
0018-8646/99/$5.00 (C) 1999 IBM Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits by dr Cote, sv Nguyen, ...
www.research.ibm.com/ journal/ rd/ 431/ cote.txt