Physics of Semiconductor DevicesThis completely reorganized edition of the classic reference provides detailed information on the underlying physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. Integrates nearly 1,000 references to important original research papers and review articles, more than 650 high-quality technical illustrations, and 25 tables of material parameters for device analysis. |
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A/cm² avalanche breakdown bandgap barrier height bias breakdown voltage capacitance carrier channel length charge circuit cm³ coefficient collector concentration conduction band constant current density current-voltage characteristics curve decreases depletion region depletion-layer width diffusion doping profile drain current drain voltage effect efficiency electric field Electron Devices emission emitter energy Energy-band diagram epitaxial equation Fermi level Figure frequency GaAs gate voltage given heterojunction holes I-V characteristics IEEE Trans IMPATT diode implantation impurity increases injection insulator interface traps inversion ionization laser Lett maximum metal metal-semiconductor microwave mobility MOSFET n-type negative resistance noise obtained operation optical output p-n junction parameters photodiode photon Phys recombination saturation semiconductor shown in Fig shows silicon SiO2 solar cell Solid State Electron structure substrate subthreshold switching temperature thermal threshold voltage thyristor tunnel diode V₁ valence band velocity versus VOLTS wavelength