Photons and Low Energy Particles in Surface Processing: Volume 236Carol I. H. Asby, James H. Brannon, Stella W. Pang The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. |
Contents
LASERINDUCED DRY ETCHING OF GaAs WITH HIGH ASPECT RATIO | 3 |
SIMULTANEOUS FABRICATION OF INSULATOR AND CONTACT HOLES | 9 |
CONDENSED CHLORINE ETCHING OF GaAs INDUCED BY EXCIMER | 15 |
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1992 Materials Research adsorbed annealing Appl ArF laser atoms chamber chemical chemical vapor deposition Cl₂ concentration crystal decrease defects desorption diffusion dose dry etching electron emission energy density epitaxial etch rate excimer laser experimental Figure fluence formation function GaAs growth increase intensity interface ion beam ion bombardment irradiation J/cm² laser ablation laser beam laser fluence laser irradiation laser power laser pulse layer Lett low energy Materials Research Society measured metal mTorr observed optical oxide oxygen particles pattern peak photon photoresist Phys plasma PMMA poly-Si polyimide polymer Proc produced pulsed laser deposition radiation ratio reaction RHEED room temperature S-layer sample scanning semiconductor shown in Fig shows silicon simulation SiO2 species spectra spectroscopy spectrum sputtering stoichiometric structure substrate substrate temperature surface Symp target technique Technol thermal thickness thin film Torr UHMW-PE wafer wavelength YBCO