Low-Dielectric Constant Materials III: Volume 476Carlye Case Continuing improvement of integrated circuits (ICs) critically depends on the use of nonconventional materials. Interconnect delay is already the most severe limiting factor in most advanced IC. This delay can be minimized by reducing the interconnect capacitance, which is determined by a combination of process architecture and materials. While a broad range of candidate materials is being explored for IC application, there is no clear consensus on what material will be used to replace SiO2. Process architectures are also unsettled, with various efforts directed to either evolving present-day technology or switching to a damascene metal approach. Yet these processes may not be scaleable beyond the 0.15 µm generation of IC technology. This book brings together experts in the field of low-k dielectrics to focus on the challenges ahead. Topics include: organic and inorganic dielectrics; interfaces and porous materials; measurement and characterization; vapor-deposited materials; fluorinated oxides and polyimides. |
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Contents
SILK Polymer Coating With LowDielectric Constant | 9 |
F During Oxygen Plasma Annealing | 19 |
Properties of New LowDielectricConstant Spinon Silicon | 25 |
Copyright | |
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1997 Materials Research adhesion aerogel annealing atoms BCB film bond BPDA-PDA capacitance Chemat-B chemical cm¹ CMP process coating copolymers cured films curve decrease delamination density deposition rate device dielectric constant diffusion e-beam cured electron Figure film stress film thickness films deposited fluorinated polyimide fluorine fluoropolymer FSG films FTEOS films FTIR gap fill glass transition temperature heating in-plane increase integrated circuits interface labile block layer low dielectric constant low-k Materials Research Society measured mechanical metal lines modulus moisture Multilevel Interconnection norbornene optical out-of-plane oxide oxygen parylene Parylene-N peak PECVD Phys planarization plasma plasma treatment polishing polyimide polymer precursor pressure Proc properties PTFE ratio reaction refractive index sample shows Si-F Si-O-Si silica silicon SiO2 SiOF films slurry spectra spin-coated spin-on structure substrate surface Symp Teflon-AF temperature TEOS thermal cycles thermal stability thin films ULSI wafer wet etch