Abstract BookThe Society., 1991 - Materials science |
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Page 255
... characterized by X - ray diffraction ( XRD ) with a Read thin film camera , scanning electron microscopy ( SEM ) , and transmission electron microscopy ( TEM ) . Auger electron spectroscopy ( AES ) was used to analyze the chemical ...
... characterized by X - ray diffraction ( XRD ) with a Read thin film camera , scanning electron microscopy ( SEM ) , and transmission electron microscopy ( TEM ) . Auger electron spectroscopy ( AES ) was used to analyze the chemical ...
Page 345
... characterized by measuring their hystereris curves and switching behaviour . For a 0.5 μm PbTiO3 film we measured a hysteresis curve with a remanent polarization of 55 μC / cm2 and a coercive field strength of 100 kV / cm . The ...
... characterized by measuring their hystereris curves and switching behaviour . For a 0.5 μm PbTiO3 film we measured a hysteresis curve with a remanent polarization of 55 μC / cm2 and a coercive field strength of 100 kV / cm . The ...
Page 583
... characterized and compared to that of more conventionally prepared titania . 4:45 P.M. U4.10 ON THE EFFECTS OF SOL - GEL SYNTHESIS PARAMETERS ON TEXTURAL AND STRUCTURAL CHARACTERISTICS OF Tio , J.A. MONTOYA , T. VIVEROS , J.M. DOMINGUEZ ...
... characterized and compared to that of more conventionally prepared titania . 4:45 P.M. U4.10 ON THE EFFECTS OF SOL - GEL SYNTHESIS PARAMETERS ON TEXTURAL AND STRUCTURAL CHARACTERISTICS OF Tio , J.A. MONTOYA , T. VIVEROS , J.M. DOMINGUEZ ...
Contents
Plenary Session 1991 Von Hippel Award Lecture | 5 |
FALL | 6 |
J Treacy | 17 |
19 other sections not shown
Common terms and phrases
alloy amorphous annealing atomic barrier behavior buffer layer Center characterized chemical chemical vapor deposition composition concentration critical current density crystalline defects Department of Materials dependence Dept devices diffusion discussed dislocations dopant doped dose effect electrical energy epitaxial etching excimer laser experimental fabricated ferroelectric flux flux pinning formation function GaAs grain boundaries grown growth in-situ increase Institute interface investigated ion beam ion implantation irradiation kinetics laser ablation lattice low temperature Materials Science measurements mechanism metal microstructure molecular molecular beam epitaxy morphology multilayer National Laboratory nucleation observed obtained optical orientation oxide oxygen parameters particles phase pinning plasma profiles properties PULSED LASER DEPOSITION reaction resistivity samples Science and Engineering semiconductor silicon simulation single crystal spectroscopy sputtering stoichiometry stress structure substrate substrate temperature superconducting superlattices surface technique Technology thermal thickness thin films transition transmission electron microscopy University wafers X-ray diffraction YBCO