Istfa 2003: Proceedings of the 29Th International Symposium for Testing and Failure Analysis

2-6 November 2003 ASM International 29th International Symposium applied ASM International backside bit cell bondpads capacitance capacitor cause chip circuit circuitry CMOS components contamination copper correlation defect deformation deprocessing detector device diagnosis dielectric diode dopant electrical energy epoxy etch failure analysis failure pattern instances film flip chip focused ion beam function gate oxide inductors integrated circuits Intel Corporation interconnect interface ion beam isolation ISTFA latchup layer layout leakage magnetic material measurement metal micron optical package parameters passive voltage contrast photons photoresist polishing poly probe region resistance resolution sample preparation scan scan chain secondary electron semiconductor shown in Figure shows signal silicide silicon simulation solder bump spatial SRAM structure substrate surface Symposium for Testing technique temperature test pattern Testing and Failure thermal thickness transistor trench TRPE wafer