1989 Spring Meeting: Final Program and Abstracts, Materials Research Society 1989 Spring Meeting, April 24-29 Town & Country Hotel, San Diego, California |
From inside the book
Results 1-3 of 81
Page 65
... FORMATION . W. Lur , J. Y. Cheng , and L.J. Chen , Department of Materials Science and Engineering , National Tsing Hua University , Hsinchu , Taiwan , Republic of China . The removal of end - of - range ( EOR ) defects in ion implanted ...
... FORMATION . W. Lur , J. Y. Cheng , and L.J. Chen , Department of Materials Science and Engineering , National Tsing Hua University , Hsinchu , Taiwan , Republic of China . The removal of end - of - range ( EOR ) defects in ion implanted ...
Page 87
... formation of ' pockets ' at the interface . This phenomenon has been corre- lated with the electrical properties of the contacts , e . g . , the enhancement of the barrier height of the contact . Comparisons between the interface ...
... formation of ' pockets ' at the interface . This phenomenon has been corre- lated with the electrical properties of the contacts , e . g . , the enhancement of the barrier height of the contact . Comparisons between the interface ...
Page 244
... formation of crystal phases respectively . The calcination process was found to be completed at temperatu- res well below 700 ° C . After ball milling the powders were characterized by laser granulometry and BET measurements . The ...
... formation of crystal phases respectively . The calcination process was found to be completed at temperatu- res well below 700 ° C . After ball milling the powders were characterized by laser granulometry and BET measurements . The ...
Contents
Rapid Thermal AnnealingChemical Vapor Deposition | 35 |
Ion Beam Processing of Advanced Electronic Materials | 59 |
Chemistry and Defects in Semiconductor Heterostructures | 79 |
13 other sections not shown
Common terms and phrases
adhesion alloy AMORPHOUS SILICON anisotropy applications Argonne AT&T Bell Laboratories atomic behavior Berkeley bulk carbon ceramic CHARACTERIZATION chemical vapor deposition Chemistry composition compounds Corporation crystalline defects density Department of Electrical Department of Materials Department of Physics dependence devices dielectric diffusion discussed dislocation dopant doping effect electron microscopy energy fabricated formation GaAs grown HETEROEPITAXY HETEROSTRUCTURES high temperature hydrogen in-situ increase Institute of Technology interface investigated ion implantation Japan kinetics laser lattice layer low temperature magnetic magneto-optic Materials Science measurements mechanism metal microstructure molecular beam epitaxy morphology multilayer Murray Hill National Laboratory nucleation observed obtained optical oxide oxygen parameters particles phase plasma polyimide polymer powder properties rapid thermal annealing RAPID THERMAL PROCESSING reaction Research Center Research Laboratory samples Science and Engineering semiconductor silicide single crystal solid spectroscopy sputtering structure studied substrate superconducting superlattices surface technique thickness thin films wafer X-ray diffraction