1989 Spring Meeting: Final Program and Abstracts, Materials Research Society 1989 Spring Meeting, April 24-29 Town & Country Hotel, San Diego, California |
From inside the book
Results 1-3 of 86
Page 75
... investigated for the first time . Double crystal x - ray diffraction line widths ( 200 Arc sec ) , low temperature photoluminescence bound exciton line widths and cross- sectional TEM results indicate the initial 2-5 um epitaxial ZnSe ...
... investigated for the first time . Double crystal x - ray diffraction line widths ( 200 Arc sec ) , low temperature photoluminescence bound exciton line widths and cross- sectional TEM results indicate the initial 2-5 um epitaxial ZnSe ...
Page 161
... investigated in detail . бре the a The periodicity of multilayered films was confirmed at each layer thicknesses ( 8 , and 6 , ) above 10Å . When the Fe decreased along with from Atoo , the coercivity Hc Α1 decreased and took a minimum ...
... investigated in detail . бре the a The periodicity of multilayered films was confirmed at each layer thicknesses ( 8 , and 6 , ) above 10Å . When the Fe decreased along with from Atoo , the coercivity Hc Α1 decreased and took a minimum ...
Page 209
... investigated by means of XPS . The chemical properties were investigated by FT - IR - ATR and Raman spectroscopy . Wettability has been investigated by the contact angle measurements of water . XPS results indicated that most of ...
... investigated by means of XPS . The chemical properties were investigated by FT - IR - ATR and Raman spectroscopy . Wettability has been investigated by the contact angle measurements of water . XPS results indicated that most of ...
Contents
Rapid Thermal AnnealingChemical Vapor Deposition | 35 |
Ion Beam Processing of Advanced Electronic Materials | 59 |
Chemistry and Defects in Semiconductor Heterostructures | 79 |
13 other sections not shown
Common terms and phrases
adhesion alloy AMORPHOUS SILICON anisotropy applications Argonne AT&T Bell Laboratories atomic behavior Berkeley bulk carbon ceramic CHARACTERIZATION chemical vapor deposition Chemistry composition compounds Corporation crystalline defects density Department of Electrical Department of Materials Department of Physics dependence devices dielectric diffusion discussed dislocation dopant doping effect electron microscopy energy fabricated formation GaAs grown HETEROEPITAXY HETEROSTRUCTURES high temperature hydrogen in-situ increase Institute of Technology interface investigated ion implantation Japan kinetics laser lattice layer low temperature magnetic magneto-optic Materials Science measurements mechanism metal microstructure molecular beam epitaxy morphology multilayer Murray Hill National Laboratory nucleation observed obtained optical oxide oxygen parameters particles phase plasma polyimide polymer powder properties rapid thermal annealing RAPID THERMAL PROCESSING reaction Research Center Research Laboratory samples Science and Engineering semiconductor silicide single crystal solid spectroscopy sputtering structure studied substrate superconducting superlattices surface technique thickness thin films wafer X-ray diffraction