1989 Spring Meeting: Final Program and Abstracts, Materials Research Society 1989 Spring Meeting, April 24-29 Town & Country Hotel, San Diego, California |
From inside the book
Results 1-3 of 69
Page 269
... OXYGEN DEFECTS . B. Dabrowski , J. D. Jorgensen , D. G. Hinks , C. U. Segre , Shiyou Pei , D. R. Richards and L. Soderholm , Materials Science Division , Argonne National Laboratory , Argonne , IL 60439 . The structural ...
... OXYGEN DEFECTS . B. Dabrowski , J. D. Jorgensen , D. G. Hinks , C. U. Segre , Shiyou Pei , D. R. Richards and L. Soderholm , Materials Science Division , Argonne National Laboratory , Argonne , IL 60439 . The structural ...
Page 285
... oxygen pressures to 25 kbar and temperatures above 500 ° C. Taking an approach similar to that of Zhou et al . , 1 the high oxygen pressures are achieved by using AgO as an in situ oxygen source in a sealed capsule pres- surized by a ...
... oxygen pressures to 25 kbar and temperatures above 500 ° C. Taking an approach similar to that of Zhou et al . , 1 the high oxygen pressures are achieved by using AgO as an in situ oxygen source in a sealed capsule pres- surized by a ...
Page 314
... oxygen . Irreversible oxygen uptake accompanied by decomposition into Pb4 + containing perovskites occurs around 700 ° C . These perovskites lose oxygen and revert to the parent phase above 850 ° in air . This behavior allows ...
... oxygen . Irreversible oxygen uptake accompanied by decomposition into Pb4 + containing perovskites occurs around 700 ° C . These perovskites lose oxygen and revert to the parent phase above 850 ° in air . This behavior allows ...
Contents
Rapid Thermal AnnealingChemical Vapor Deposition | 35 |
Ion Beam Processing of Advanced Electronic Materials | 59 |
Chemistry and Defects in Semiconductor Heterostructures | 79 |
13 other sections not shown
Common terms and phrases
adhesion alloy AMORPHOUS SILICON anisotropy applications Argonne AT&T Bell Laboratories atomic behavior Berkeley bulk carbon ceramic CHARACTERIZATION chemical vapor deposition Chemistry composition compounds Corporation crystalline defects density Department of Electrical Department of Materials Department of Physics dependence devices dielectric diffusion discussed dislocation dopant doping effect electron microscopy energy fabricated formation GaAs grown HETEROEPITAXY HETEROSTRUCTURES high temperature hydrogen in-situ increase Institute of Technology interface investigated ion implantation Japan kinetics laser lattice layer low temperature magnetic magneto-optic Materials Science measurements mechanism metal microstructure molecular beam epitaxy morphology multilayer Murray Hill National Laboratory nucleation observed obtained optical oxide oxygen parameters particles phase plasma polyimide polymer powder properties rapid thermal annealing RAPID THERMAL PROCESSING reaction Research Center Research Laboratory samples Science and Engineering semiconductor silicide single crystal solid spectroscopy sputtering structure studied substrate superconducting superlattices surface technique thickness thin films wafer X-ray diffraction