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1999 Materials Research a-C:F film absorption adhesion promoter adsorbate adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cured films curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching fabricated film expansion film thickness films deposited FLAC fluorine FOx films FTIR increase integration interface layer leakage current low dielectric constant low-k low-k materials low-K polymer Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample Semiconductor shown in Figure shows Si-H bonds Si-O silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thermal stability thin films ULSI voltage wafer xerogel xerogel films
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