Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 18
... measured by an alpha - step technique , by ellipsometry , or by cross - sectional Scanning Electron Microscopy ( SEM ) . To make a porous PAE film , a modified PAE solution was made by adding a certain amount of a specially prepared ...
... measured by an alpha - step technique , by ellipsometry , or by cross - sectional Scanning Electron Microscopy ( SEM ) . To make a porous PAE film , a modified PAE solution was made by adding a certain amount of a specially prepared ...
Page 90
... measurement on Xerogel films having porosities from 48 % to 77 % . Porosity and thickness are measured by ellipsometry . A 3w measurement on 48 % porous Xerogel is shown in Fig . 5. The line width is 30μm , length is 3 mm , and the film ...
... measurement on Xerogel films having porosities from 48 % to 77 % . Porosity and thickness are measured by ellipsometry . A 3w measurement on 48 % porous Xerogel is shown in Fig . 5. The line width is 30μm , length is 3 mm , and the film ...
Page 133
... measured to compare with that from Cu / SiO2 based single damascene structure . Fig . 7 shows the plots of statistical distribution of measured line capacitance from both damascene structures . For Cu / a - F : C structure , the average ...
... measured to compare with that from Cu / SiO2 based single damascene structure . Fig . 7 shows the plots of statistical distribution of measured line capacitance from both damascene structures . For Cu / a - F : C structure , the average ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films