Solid State Electronic Devices |
Contents
Atoms and Electrons | 26 |
Semiconductors | 52 |
Excess Carriers in Semiconductors | 95 |
Copyright | |
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alloyed applications approximation assume atoms band base base region bias biased bonding calculate called carrier channel Chapter characteristic charge circuit collector components condition conduction conduction band consider constant crystal density depletion device diffusion diode direction discussed distribution domain doping drift effects electric field electrons emitter energy equation equilibrium example excess fabrication field FIGURE flow forward frequency GaAs gate given hole illustrated important impurity increase indicates injection integrated junction laser lattice layer length light material measured mechanism metal method MICHIGAN mode n-type negative obtained occurs operation p-n junction pattern photons positive potential problem properties pulse recombination reduced region relation resistance result reverse sample saturation semiconductor side simple space step structure substrate surface switching techniques temperature tion transistor transition region usually valence varies voltage wafer