Molecular Electronics: Volume 582Sokrates T. Pantelides, Mark A. Reed, James Murday, Ari Aviram In conventional microelectronics, devices are fabricated by lithographic processes. Ultimately, for devices with feature lengths below 100nm, alternative approaches may become necessary. This book focuses on materials issues that relate to the fabrication of nanoelectronics in which the active regions of devices are either molecules or nanoparticles, and self-assembly replaces lithography. The volume is interdisciplinary in nature and features work by a diverse gathering of chemists, physicists, materials scientists and mainstream silicon engineers. Materials of interest include, but are not limited to, organic molecules, carbon nanotubes and semiconductor nanoclusters. |
Contents
Materials Research Society Symposium Proceedings XX | 9 |
Artificial Atoms Of Silicon H2 | 12 |
Room Temperature Negative Differential Resistance | 13 |
Copyright | |
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Appl applications arrays atoms band behavior bias bismuth bonding bulk calculated carbon carrier CdSe characteristics charge Chem chemical Chemistry clusters concentration conductance consistent Coulomb coupling density Department dependence deposition Dept devices diameter dipole direction discussed doped dots effect electrical electron energy excited experimental experiments fabrication Fermi level field Figure films function gold groups increase interface ISBN layer Lett ligand Materials measurements metal method molecular molecule monolayer nanocrystals nanoparticles nanoscale nanotubes nanowires observed occurs optical organic particles peak performed Phys Physics plasmon polymer polysilane position potential prepared present properties quantum reported Research resistance resonance room temperature sample scale Science self-assembled semiconductor shift shown silicon single solid solution spacing spectra structure substrate surface synthesized technique temperature template thickness thin transport tunneling University vacuum voltage Volume wire