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Physics of Semiconductor Devices

Front Cover
18 Reviews
John Wiley & Sons, Nov 3, 2006 - Technology & Engineering - 832 pages
The Third Edition of the standard textbook and reference in the field of semiconductor devices

This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices.

Designed for graduate textbook adoptions and reference needs, this new edition includes:

  • A complete update of the latest developments
  • New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more
  • Materials completely reorganized
  • Problem sets at the end of each chapter
  • All figures reproduced at the highest quality

Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations.

 A Solutions Manual is available from the editorial department.

  

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Thanks for providing me the book it helps me in coarse study.Thanks a lot.

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Very helpful: thorough and understandable:) Read full review

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Selected pages

Contents

Part II Device Building Blocks
77
Part III Transistors
241
Part IV NegativeResistance and Power Devices
415
Part V Photonic Devices and Sensors
599
Appendixes
773
Index
793
Copyright

Other editions - View all

Physics of Semiconductor Devices
Physics of Semiconductor Devices
S. M. Sze
Snippet view - 1981
Physics of semiconductor devices
Physics of semiconductor devices
S. M. Sze
Snippet view - 1969
Physics of Semiconductor Devices
Physics of Semiconductor Devices
Simon M. Sze,Kwok K. Ng
No preview available - 2006
View all »

Common terms and phrases

applied avalanche avalanche breakdown bandgap barrier height base biased bipolar transistor breakdown voltage capacitance capacitor carriers cathode channel characteristics charge circuit coefficient collector concentration conduction band constant current density current gain defined depletion region depletion width depletion-layer device diffusion doping doping profile drain effect electric field Electron Dev emission emitter Energy-band diagrams equation factor Fermi level figure find first flow frequency GaAs given heterojunction higher IEEE Trans IMPATT diode impurity increases injection insulator inversion ionization laser lattice layer Lett maximum metal metal-semiconductor mobility MOSFET n-p-n transistor n-type negative noise obtained optical output oxide p-n junction p-type semiconductor photodetector photodiode photon Phys potential recombination reduced reflection resistance saturation semiconductor sensor shown in Fig silicon Solid-State Electron structure substrate surface temperature thermal thickness threshold voltage thyristor tion transit tunnel diode tunneling current valence band velocity wavelength

References to this book

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References from web pages

Physics of Semiconductor Devices
Edition of Physics of Semiconductor Devices were published in 1969 and 198 1,. respectively. It is perhaps somewhat surprising that the book has so long ...
doi.wiley.com/ 10.1002/ 9780470068328.fmatter

Sze S M. Physics of semiconductor devices. New York: Wiley, 1969 ...
T. Week’s. Citation Classic___. Sze S M. Physics ofsemiconductordevices. New York: Wiley, 1969. 812 p. [Bell Telephone Laboratories, Inc., Murray Hill, NJJ ...
www.garfield.library.upenn.edu/ classics1982/ A1982NU66500001.pdf

Physics of Semiconductor Devices, 2nd Edition - Simon M. Sze ...
Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most ...
www.8051projects.net/ forum-t4686.html

Physics of Semiconductor Devices - About the book
The book is a collection of numerical and theoretical problems in physics of semiconductor devices. It is intended for undergraduate students of physics and ...
free-zg.t-com.hr/ Julijan-Sribar/ en/ about.html

Physics of Semiconductor Devices | Free ebooks Download!
Download Free ebook:Physics of Semiconductor Devices - Free chm, pdf ebooks rapidshare download, ebook torrents bittorrent download.
www.ebookee.com/ Physics-of-Semiconductor-Devices_58219.html

Energy Citations Database (ECD) - - Document #5381484
Title, Physics of semiconductor devices (2nd edition). Creator/Author, Sze, sm. Publication Date, 1981 Jan 01. OSTI Identifier, OSTI ID: 5381484 ...
www.osti.gov/ energycitations/ product.biblio.jsp?osti_id=5381484

sm Sze Physics of Semiconductor Devices - FORUM akademi
Title: Physics of Semiconductor Devices (2nd Ed.) Author: sm Sze Publisher: John Wiley and Sons (WIE) Publication Date: 1981-11 Number Of Pages: 880 ...
www.forumakademi.org/ archive/ s-m-sze-physics-semiconductor-t18752.html

Phys. Rev. B 57, 2628 (1998): hlăˇvka - Comment on “role of ...
sm Sze, Physics of Semiconductor Devices (Wiley, New York, 1969), Chap. 8, Sec. 4 [ADS]. sm Sze, Physics of Semiconductor Devices (Ref. 4), Chap. 12, Sec. ...
link.aps.org/ doi/ 10.1103/ PhysRevB.57.2628

EEL 6397
Textbook: Physics of Semiconductor Devices (3rd Ed.) sm Sze and kk Ng ... Content: This course teaches the basic physics of semiconductor devices, ...
www.soi.tec.ufl.edu/ courses/ eel6397.html

Implanted-Silicided Polysilicon Gates for VLSI Transistors 0
Sze, Physics of Semiconductor Devices. New York: Wiley,. wm Werner, “The work function difference of the MOS-system. with aluminum field plates and ...
ieeexplore.ieee.org/ iel5/ 16/ 31956/ 01485895.pdf

About the author (2006)

S. M. Sze received his PhD in electrical engineering from Stanford University. He was with Bell Telephone Laboratories from 1963–1989, joining the faculty of the Department of Electronics Engineering, National Chiao Tung University (NCTU) in 1990. Dr. Sze is currently Distinguished Chair Professor of NCTU and has served as a visiting professor to many academic institutions. He has made fundamental and pioneering contributions to semiconductor devices; of particular importance is his coinvention of nonvolatile semiconductor memory such as flash memory and EEPROM. Dr. Sze has authored, coauthored, or edited over 200 technical papers and twelve books. His book Physics of Semiconductor Devices (Wiley) is one of the most cited works in contemporary engineering and applied science publications (over 15,000 citations from ISI Press). Dr. Sze is the recipient of numerous awards and holds such titles as Life Fellow of the IEEE, Academician of the Academia Sinica, and member of the US National Academy of Engineering.

Kwok K. Ng received his PhD from Columbia University in 1979 and BS from Rutgers University in 1975, both in electrical engineering. He joined Bell Laboratories of AT&T in Murray Hill, New Jersey, in 1980, which spun off as part of Lucent Technologies in 1996. He became affiliated with Agere Systems in Allentown, Pennsylvania, as the microelectronics unit became independent in 2001. He has been with MVC in San Jose, California, since 2005. Dr. Ng has also held positions as editor of IEEE Electron Device Letters and liaison to IEEE Press. He is the author of the Complete Guide to Semiconductor Devices, Second Edition (Wiley).

Bibliographic information

QR code for Physics of Semiconductor Devices
TitlePhysics of Semiconductor Devices
AuthorsSimon M. Sze, Kwok K. Ng
Edition3
PublisherJohn Wiley & Sons, 2006
ISBN0470068302, 9780470068304
Length832 pages
Subjects ›  › 

Technology & Engineering / Electronics / Semiconductors
  
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