Electronic Materials and DevicesThis book provides the knowledge and understanding necessary to comprehend the operation of individual electronic devices that are found in modern micro-electronics. As a textbook, it is aimed at the third-year undergraduate curriculum in electrical engineering, in which the physical electronic properties are used to develop an introductory understanding to the semiconductor devices used in modern micro-electronics. The emphasis of the book is on providing detailed physical insight into the microscopic mechanisms that form the cornerstone for these technologies. Mathematical treatments are therefore kept to the minimum level necessary to achieve suitable rigor. * Covers crystalline structure * Thorough introduction to the key principles of quantum mechanics * Semiconductor statistics, impurities, and controlled doping * Detailed analysis of the operation of semiconductor devices, including p-n junctions, field-effect transistors, metal-semiconductor junctions and bipolar junction transistors * Discussion of optoelectronic devices such as light-emitting diodes (LEDs) and lasers * Chapters on the device applications of dielectrics, magnetic materials, and superconductors |
Common terms and phrases
absorption AlGaAs angle angular momentum applied atoms band gap bias bonding Brillouin zone built-in potential capacitor Chapter charge chip circuit cm³ coefficient conduction band consider crystal structure crystalline cubic density depletion region devices dielectric constant diffraction diffusion diode dipole direction discussed donors doped effective mass electric field electrons and holes emitted energy gap energy level equilibrium example excess carriers factor Fermi energy Figure flux force frequency GaAs gate given Hence impurities integrated interaction interface ionized laser lattice layer magnetic field material metal MOSFET n-type region N₁ normal number of electrons occur optical orbital oxide p-n junction pair particle photon plane plot polarization position properties quantum radiation result Schrödinger equation semiconductor shown in Fig silicon solid spin superconducting surface term thermal thickness transistor transition tunneling unit cell valence band variation velocity voltage wafer wave function wave vector wavelength width zero zinc-blende