Properties and MicrostructureR. K. MacCrone |
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Contents
Direct Observation of Defects | 1 |
Lattice and Structure Imaging | 29 |
Crystal Defects in Integrated Circuits | 47 |
Copyright | |
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addition anisotropy appear Appl applied approximately atoms behavior bodies cause Ceram changes composition compressive concentration crack crystal damage decrease defects density dependence determined developed devices diffusion direction discussed dislocations distribution domain effects electron equation et al example failure ferrites field flaw fracture energy frequency function give glass grain boundary grain size growth hardness higher important impurities increasing indicated initial ions lattice limited located lower magnetic materials measurements mechanical melt metals microstructure mode noted observed occur orientation oxide oxygen particles phase Phys plane pores porosity possible precipitation present Press properties range reduce region relatively Rice sample shape shown in Fig shows significant silicon similar single sizes solid specimen stacking faults strength stress structure studies surface Table techniques temperature tests theory thermal values volume wall waves York