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a-Si absorption alloy amorphous silicon analysis applications April 16 atoms Auger band gap Berkeley carrier characterization chemical composition concentration Corporation crystal crystalline deep levels defects density deposition depth profiling determined developed devices diffraction diffusion discussed disk donor dopant doped dose effects electrical electron microscopy energy epitaxial etching experimental formation function GaAs growth hydrogen impurities interface investigated Invited talk ion beam ion implantation Japan laser layer magnetic Materials Research measurements metal microstructure Murray Hill National Laboratory nitride observed obtained optical oxide oxygen Palo Alto parameters photoconductivity Physics plasma polymer properties range rapid thermal annealing Research Center Research Laboratory resonance Rutherford backscattering samples Sandia National Laboratories scanning Schottky secondary ion semiconductors SESSION silicide SIMS soft x-ray solar cells spectra spectrometry spectroscopy sputtering Stanford structure substrate surface synchrotron radiation technique Technology temperature thickness thin films transmission electron microscopy University wafers Yorktown Heights