Introduction to Solid State PhysicsNew edition of the most widely-used textbook on solid state physics in the world. Describes how the excitations and imperfections of actual solids can be understood with simple models that have firmly established scope and power. The foundation of this book is based on experiment, application and theory. Several significant advances in the field have been added including high temperature superconductors, quasicrystals, nanostructures, superlattices, Bloch/Wannier levels, Zener tunneling, light-emitting diodes and new magnetic materials. |
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Page 223
... germanium and me≈ 0.2 m in silicon . The static dielectric constant is given in Table 4. The ionization energy of the free hydrogen atom is 13.6 eV . For germanium the donor ionization energy Ed on our model is 5 meV , reduced with ...
... germanium and me≈ 0.2 m in silicon . The static dielectric constant is given in Table 4. The ionization energy of the free hydrogen atom is 13.6 eV . For germanium the donor ionization energy Ed on our model is 5 meV , reduced with ...
Page 224
... germanium and ( 60 ) ( 0.53 ) ≈ 30 Å in silicon . These are large radii , so that donor orbits overlap at relatively low donor concentrations , compared to the number of host atoms . With appreciable overlap , an “ impurity band " is ...
... germanium and ( 60 ) ( 0.53 ) ≈ 30 Å in silicon . These are large radii , so that donor orbits overlap at relatively low donor concentrations , compared to the number of host atoms . With appreciable overlap , an “ impurity band " is ...
Page 225
... germanium and 2.6 × 105 ohm - cm for silicon . Germanium has 4.42 × 1022 atoms per cm3 . The purification of Ge has been carried further than any other element.2 The concentration of the com- mon electrically active impurities - the ...
... germanium and 2.6 × 105 ohm - cm for silicon . Germanium has 4.42 × 1022 atoms per cm3 . The purification of Ge has been carried further than any other element.2 The concentration of the com- mon electrically active impurities - the ...
Contents
PERIODIC ARRAYS OF ATOMS | 3 |
1 | 10 |
INDEX SYSTEM FOR CRYSTAL PLANES | 12 |
Copyright | |
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a₁ absolute zero alloys approximation atoms axis band edge Bloch Brillouin zone Chapter charge collision components conduction band conduction electrons crystal structure defined density dielectric diffraction dimensions direction dislocation dispersion relation displacement effective mass elastic electric field electron concentration electron gas energy gap equation equilibrium exciton factor Fermi level Fermi surface ferromagnetic Figure flux Fourier free electron frequency function germanium heat capacity hole impurity integral interaction ionic ions lattice constant lattice point layer low temperatures magnetic field magnetic moment metals modes momentum motion nearest-neighbor neutron normal optical orbital oscillator particle phase phonon plane polarization potential energy primitive cell quantum reciprocal lattice vector resonance result scattering semiconductor shown in Fig silicon solution space specimen sphere spin superconducting Table theory thermal tion transition unit valence band values velocity voltage volume wave wavefunction wavelength wavevector x-ray zone boundary