Introduction to Solid State PhysicsNew edition of the most widely-used textbook on solid state physics in the world. Describes how the excitations and imperfections of actual solids can be understood with simple models that have firmly established scope and power. The foundation of this book is based on experiment, application and theory. Several significant advances in the field have been added including high temperature superconductors, quasicrystals, nanostructures, superlattices, Bloch/Wannier levels, Zener tunneling, light-emitting diodes and new magnetic materials. |
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Page 223
... silicon 0 Si Figure 19 Charges associated with an arsenic impurity atom in silicon . Arsenic has five valence electrons , but silicon has only four valence electrons . Thus four electrons on the arsenic form tetrahedral covalent bonds ...
... silicon 0 Si Figure 19 Charges associated with an arsenic impurity atom in silicon . Arsenic has five valence electrons , but silicon has only four valence electrons . Thus four electrons on the arsenic form tetrahedral covalent bonds ...
Page 225
... silicon Figure 20 Boron has only three valence electrons ; it can complete its tetrahedral bonds only by taking an electron from a Si - Si bond , leaving behind a hole in the silicon valence band . The positive hole is then available ...
... silicon Figure 20 Boron has only three valence electrons ; it can complete its tetrahedral bonds only by taking an electron from a Si - Si bond , leaving behind a hole in the silicon valence band . The positive hole is then available ...
Page 532
... silicon is a candidate material for solar cells . Amorphous silicon is a much less expensive material than single crystal silicon . Attempts at using pure amorphous silicon , however , failed because of struc- tural defects ( dangling ...
... silicon is a candidate material for solar cells . Amorphous silicon is a much less expensive material than single crystal silicon . Attempts at using pure amorphous silicon , however , failed because of struc- tural defects ( dangling ...
Contents
PERIODIC ARRAYS OF ATOMS | 3 |
1 | 10 |
INDEX SYSTEM FOR CRYSTAL PLANES | 12 |
Copyright | |
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a₁ absolute zero alloys approximation atoms axis band edge Bloch Brillouin zone Chapter charge collision components conduction band conduction electrons crystal structure defined density dielectric diffraction dimensions direction dislocation dispersion relation displacement effective mass elastic electric field electron concentration electron gas energy gap equation equilibrium exciton factor Fermi level Fermi surface ferromagnetic Figure flux Fourier free electron frequency function germanium heat capacity hole impurity integral interaction ionic ions lattice constant lattice point layer low temperatures magnetic field magnetic moment metals modes momentum motion nearest-neighbor neutron normal optical orbital oscillator particle phase phonon plane polarization potential energy primitive cell quantum reciprocal lattice vector resonance result scattering semiconductor shown in Fig silicon solution space specimen sphere spin superconducting Table theory thermal tion transition unit valence band values velocity voltage volume wave wavefunction wavelength wavevector x-ray zone boundary