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LowDielectric Constant Materials for IC Intermetal
A Study of Anisotropy of Spin Cast and VaporDeposited
A LOW ER Material Candidate for ULSI
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absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows SiF4 silica silicon similar SiO2 SiOF films Solid solution solvent spectra stress structure substrate surface Table Teflon temperature thermal stability thickness transition treatment values Volume wafer weight xerogel