Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 13
Page 7
... CMP of cap CVD oxides , can significantly minimize the amount of material required to be removed ( and thus the process time and cost ) in a dielectric CMP process [ 17 ] . The alkylsilsesquioxanes , which are most commonly prepared ...
... CMP of cap CVD oxides , can significantly minimize the amount of material required to be removed ( and thus the process time and cost ) in a dielectric CMP process [ 17 ] . The alkylsilsesquioxanes , which are most commonly prepared ...
Page 131
... CMP • before CMP 8 FSG W / TSRO CMP , HF CMP process Figure 4 : Refractive Index measurement before and after CMP and cleaning The HF - based post CMP clean resulted in smaller change in the refractive index than the NH4OH - based ...
... CMP • before CMP 8 FSG W / TSRO CMP , HF CMP process Figure 4 : Refractive Index measurement before and after CMP and cleaning The HF - based post CMP clean resulted in smaller change in the refractive index than the NH4OH - based ...
Page 135
... CMP and post CMP cleaning were investigated . The main conclusions from this work are : 1 ) FSG films with 3 % SiF ... process . 3 ) Thermal desorption studies show that the desorption of HF and H2O is not affected by the CMP and post ...
... CMP and post CMP cleaning were investigated . The main conclusions from this work are : 1 ) FSG films with 3 % SiF ... process . 3 ) Thermal desorption studies show that the desorption of HF and H2O is not affected by the CMP and post ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber