Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 111
... calculations are then used to identify inductive effects of Si- F bonds on the properties of Si - O - Si groups that are back - bonded to the Si atom of the Si - F group . These calculations provide a theoretical framework for ...
... calculations are then used to identify inductive effects of Si- F bonds on the properties of Si - O - Si groups that are back - bonded to the Si atom of the Si - F group . These calculations provide a theoretical framework for ...
Page 117
... calculations for the effects identified immediately above in ( i ) and ( ii ) will be presented in elsewhere [ 9 ] ... calculating changes in the dipole moments ( M ) corresponding to displacements ( u ) of the O atom and F atoms that are ...
... calculations for the effects identified immediately above in ( i ) and ( ii ) will be presented in elsewhere [ 9 ] ... calculating changes in the dipole moments ( M ) corresponding to displacements ( u ) of the O atom and F atoms that are ...
Page 145
... calculate the complex dielectric constants . Figure 2 shows the dielectric constant calculated by Kramers - Kronig relation . 4 Figure 3 shows the dielectric constants obtained by C - V measurements and Kramers - Kronig relation . The ...
... calculate the complex dielectric constants . Figure 2 shows the dielectric constant calculated by Kramers - Kronig relation . 4 Figure 3 shows the dielectric constants obtained by C - V measurements and Kramers - Kronig relation . The ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber