Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 111
... calculations are then used to identify inductive effects of Si- F bonds on the properties of Si - O - Si groups that are back - bonded to the Si atom of the Si - F group . These calculations provide a theoretical framework for ...
... calculations are then used to identify inductive effects of Si- F bonds on the properties of Si - O - Si groups that are back - bonded to the Si atom of the Si - F group . These calculations provide a theoretical framework for ...
Page 117
... calculations for the effects identified immediately above in ( i ) and ( ii ) will be presented in elsewhere [ 9 ] ... calculating changes in the dipole moments ( M ) corresponding to displacements ( u ) of the O atom and F atoms that are ...
... calculations for the effects identified immediately above in ( i ) and ( ii ) will be presented in elsewhere [ 9 ] ... calculating changes in the dipole moments ( M ) corresponding to displacements ( u ) of the O atom and F atoms that are ...
Page 145
... calculate the complex dielectric constants . Figure 2 shows the dielectric constant calculated by Kramers - Kronig relation . 4 Figure 3 shows the dielectric constants obtained by C - V measurements and Kramers - Kronig relation . The ...
... calculate the complex dielectric constants . Figure 2 shows the dielectric constant calculated by Kramers - Kronig relation . 4 Figure 3 shows the dielectric constants obtained by C - V measurements and Kramers - Kronig relation . The ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films