Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 57
... Chapter 9 . 2. S. P. Murarka , Solid State Technology , 83 ( March 1996 ) . 3. S.-P. Jang , R. H. Havemann and M. C. Chang , Mater . Res . Soc . Symp . Proc . 337 , 25 ( 1994 ) . 4. P. Singer , Semiconductor International , 88 ( May ...
... Chapter 9 . 2. S. P. Murarka , Solid State Technology , 83 ( March 1996 ) . 3. S.-P. Jang , R. H. Havemann and M. C. Chang , Mater . Res . Soc . Symp . Proc . 337 , 25 ( 1994 ) . 4. P. Singer , Semiconductor International , 88 ( May ...
Page 58
... Chapter 10 . 14. S. A. Srinivasan , J. L. Hedrick , R. D. Miller and R. Di Pietro , Polymer , 1997 ( submitted for publication ) . 15. E. A. Leone and A. J. Signorelli , in Materials Characterization and Chemical Analysis , 2nd edition ...
... Chapter 10 . 14. S. A. Srinivasan , J. L. Hedrick , R. D. Miller and R. Di Pietro , Polymer , 1997 ( submitted for publication ) . 15. E. A. Leone and A. J. Signorelli , in Materials Characterization and Chemical Analysis , 2nd edition ...
Page 65
... chapter , we will examine the influence of the exact structure of the polymer repeating unit on the glass transi- tion temperature . Table 4 : Glass transition temperaturesa ) of the polymers 14 Polymer No. 14a 14b T./°C 136 14c 142 151 ...
... chapter , we will examine the influence of the exact structure of the polymer repeating unit on the glass transi- tion temperature . Table 4 : Glass transition temperaturesa ) of the polymers 14 Polymer No. 14a 14b T./°C 136 14c 142 151 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber