Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 155
... DLC ( SiDLC ) was studied as a potential low - k etch stop material between adjacent DLC based ILD layers , which can be patterned by oxygen - based plasma etching . It was found that the dielectric constant ( k ) of the DLC films can ...
... DLC ( SiDLC ) was studied as a potential low - k etch stop material between adjacent DLC based ILD layers , which can be patterned by oxygen - based plasma etching . It was found that the dielectric constant ( k ) of the DLC films can ...
Page 156
... DLC was expected to produce a more oxidation - resistant material , since it was assumed that exposing SiDLC to an oxygen plasma would result in the etching away of C and H from the film and formation and accumulation of SiO2 . Once ...
... DLC was expected to produce a more oxidation - resistant material , since it was assumed that exposing SiDLC to an oxygen plasma would result in the etching away of C and H from the film and formation and accumulation of SiO2 . Once ...
Page 157
... DLC films is presented in Figure 1 , which shows that the films contain 40 % -46 % hydrogen . It can also be seen that the amount of hydrogen incorporated in the films decreases with increasing power and decreasing pressure . The ...
... DLC films is presented in Figure 1 , which shows that the films contain 40 % -46 % hydrogen . It can also be seen that the amount of hydrogen incorporated in the films decreases with increasing power and decreasing pressure . The ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber