Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 127
... ( FSG ) is presented . This study investigates the behavior of FSG film in the Chemical Mechanical Polishing ( CMP ) environment and compares those characteristics to undoped TEOS ( UTEOS ) , Thermal Oxide and Si - Rich oxide capped FSG films ...
... ( FSG ) is presented . This study investigates the behavior of FSG film in the Chemical Mechanical Polishing ( CMP ) environment and compares those characteristics to undoped TEOS ( UTEOS ) , Thermal Oxide and Si - Rich oxide capped FSG films ...
Page 130
... FSG FSG c . FSG on Si 2kA SI - Rich Oxide ( SRO ) FSG d . 2kA SRO on FSG on Si e . 5kÅ SRO on FSG on Si Figure 2 : Schematic of the film structures after CMP Normalized Polish Rate ... FSG films with the remaining Si - rich cap showed 130.
... FSG FSG c . FSG on Si 2kA SI - Rich Oxide ( SRO ) FSG d . 2kA SRO on FSG on Si e . 5kÅ SRO on FSG on Si Figure 2 : Schematic of the film structures after CMP Normalized Polish Rate ... FSG films with the remaining Si - rich cap showed 130.
Page 184
paper [ 1,2,3 ] . It has been reported that FSG films doped with SiF4 are more stable than fluorocarbon - doped films [ 1,2 ] . Because the process issues associated with SiF4 - doped HDPCVD FSG are not well understood , we discuss them ...
paper [ 1,2,3 ] . It has been reported that FSG films doped with SiF4 are more stable than fluorocarbon - doped films [ 1,2 ] . Because the process issues associated with SiF4 - doped HDPCVD FSG are not well understood , we discuss them ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber