Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 95
... Figure 4 but one could also add a catalyst to decrease the gel time as shown in Figure 5. For those experiments , the solids content was maintained at 5 % and no solvent evaporation was involved . Therefore , the effects of solids ...
... Figure 4 but one could also add a catalyst to decrease the gel time as shown in Figure 5. For those experiments , the solids content was maintained at 5 % and no solvent evaporation was involved . Therefore , the effects of solids ...
Page 157
... Figure 1 , which shows that the films contain 40 % -46 % hydrogen . It can also be seen that the amount of hydrogen incorporated in the films decreases with increasing power and decreasing pressure . The dielectric constant ( k ) of a ...
... Figure 1 , which shows that the films contain 40 % -46 % hydrogen . It can also be seen that the amount of hydrogen incorporated in the films decreases with increasing power and decreasing pressure . The dielectric constant ( k ) of a ...
Page 161
... Figure 10 presents the RBS spectra of sample S3 , as - deposited and after several etching times . The spectrum of ... Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer of the SiDLC film with ...
... Figure 10 presents the RBS spectra of sample S3 , as - deposited and after several etching times . The spectrum of ... Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer of the SiDLC film with ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films