Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 95
... Figure 4 but one could also add a catalyst to decrease the gel time as shown in Figure 5. For those experiments , the solids content was maintained at 5 % and no solvent evaporation was involved . Therefore , the effects of solids ...
... Figure 4 but one could also add a catalyst to decrease the gel time as shown in Figure 5. For those experiments , the solids content was maintained at 5 % and no solvent evaporation was involved . Therefore , the effects of solids ...
Page 157
... Figure 1 , which shows that the films contain 40 % -46 % hydrogen . It can also be seen that the amount of hydrogen incorporated in the films decreases with increasing power and decreasing pressure . The dielectric constant ( k ) of a ...
... Figure 1 , which shows that the films contain 40 % -46 % hydrogen . It can also be seen that the amount of hydrogen incorporated in the films decreases with increasing power and decreasing pressure . The dielectric constant ( k ) of a ...
Page 161
... Figure 10 presents the RBS spectra of sample S3 , as - deposited and after several etching times . The spectrum of ... Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer of the SiDLC film with ...
... Figure 10 presents the RBS spectra of sample S3 , as - deposited and after several etching times . The spectrum of ... Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer of the SiDLC film with ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber