Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 95
1 Catalyst Concentration Figure 5 . Use of catalysis to reduce gel time at 25 °C
and 5 % solids . 0 10 20 30 40 50 Temperature ( °C ) Figure 6 . Variation of silica
gel time with temperature at 5 % solids content . The silica concentration in the ...
1 Catalyst Concentration Figure 5 . Use of catalysis to reduce gel time at 25 °C
and 5 % solids . 0 10 20 30 40 50 Temperature ( °C ) Figure 6 . Variation of silica
gel time with temperature at 5 % solids content . The silica concentration in the ...
Page 157
RESULTS AND DISCUSSION The hydrogen content in the DLC films is
presented in Figure 1 , which shows that the films contain 40 % - 46 % hydrogen .
It can also be seen that the amount of hydrogen incorporated in the films
decreases with ...
RESULTS AND DISCUSSION The hydrogen content in the DLC films is
presented in Figure 1 , which shows that the films contain 40 % - 46 % hydrogen .
It can also be seen that the amount of hydrogen incorporated in the films
decreases with ...
Page 161
Figure 10 presents the RBS spectra of sample S3 , as - deposited and after
several etching times . The spectrum of the as - deposited sample can be fitted to
a layer of 880 nm containing Si in a ratio of Si / ( Si + C ) = 3 % . It is clear from the
Fig ...
Figure 10 presents the RBS spectra of sample S3 , as - deposited and after
several etching times . The spectrum of the as - deposited sample can be fitted to
a layer of 880 nm containing Si in a ratio of Si / ( Si + C ) = 3 % . It is clear from the
Fig ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |