Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 183
... HDPCVD films discussed in this paper were deposited using commercially available 200mm wafer reactors from Applied Materials and Novellus Systems . The PECVD FSG films were processed exclusively in Applied Materials reactors and the HDPCVD ...
... HDPCVD films discussed in this paper were deposited using commercially available 200mm wafer reactors from Applied Materials and Novellus Systems . The PECVD FSG films were processed exclusively in Applied Materials reactors and the HDPCVD ...
Page 184
... HDPCVD FSG are not well understood , we discuss them below . By performing Taguchi - type design - of - experiments , we determined that the fluorine content in HDPCVD FSG films increases with decreasing wafer temperature , decreasing ...
... HDPCVD FSG are not well understood , we discuss them below . By performing Taguchi - type design - of - experiments , we determined that the fluorine content in HDPCVD FSG films increases with decreasing wafer temperature , decreasing ...
Page 185
... HDPCVD and high 02 : TEOS ratio PECVD films were not degraded . These results , which are consistent with the FT ... HDPCVD CF4 3 % 0.7 HDPCVD CF4 3 % 0.9 HDPCVD SIF4 3 % 0.5 HDPCVD SIF4 3 % 0.7 HDPCVD SiF4 12 % 0.7 All SiO2 Control 0 ...
... HDPCVD and high 02 : TEOS ratio PECVD films were not degraded . These results , which are consistent with the FT ... HDPCVD CF4 3 % 0.7 HDPCVD CF4 3 % 0.9 HDPCVD SIF4 3 % 0.5 HDPCVD SIF4 3 % 0.7 HDPCVD SiF4 12 % 0.7 All SiO2 Control 0 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber