Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 29
... N which contains no fluorine at the benzylic position , a glass transition temperature ( T ) of 13 ° C has been reported 19. The reported crystalline melting ( Tm ) for parylene N ... Pa . Upon cooling the stress returns to a tensile value ...
... N which contains no fluorine at the benzylic position , a glass transition temperature ( T ) of 13 ° C has been reported 19. The reported crystalline melting ( Tm ) for parylene N ... Pa . Upon cooling the stress returns to a tensile value ...
Page 98
... N. Hendricks , N. Rutherford , J. Drage and others at Nanoglass . A portion of this work was funded at NanoPore ... PA , 1995 . ' D.M. Smith , J. M. Anderson , C.C. Cho , G.P.Johnston , and S.P. Jeng , Low Dielectric Constant Materials , ...
... N. Hendricks , N. Rutherford , J. Drage and others at Nanoglass . A portion of this work was funded at NanoPore ... PA , 1995 . ' D.M. Smith , J. M. Anderson , C.C. Cho , G.P.Johnston , and S.P. Jeng , Low Dielectric Constant Materials , ...
Page 171
... N. Vrtis * , Kelly A. Heap * , William F. Burgoyne ** , Lloyd M. Robeson ** * Schumacher , 1969 Paolmar Oaks Way , Carlsbad CA , 92009 ** Air Products and Chemicals Inc. , 7201 Hamilton Blvd. , Allentown , PA 18195 ABSTRACT Poly ...
... N. Vrtis * , Kelly A. Heap * , William F. Burgoyne ** , Lloyd M. Robeson ** * Schumacher , 1969 Paolmar Oaks Way , Carlsbad CA , 92009 ** Air Products and Chemicals Inc. , 7201 Hamilton Blvd. , Allentown , PA 18195 ABSTRACT Poly ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber