Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 127
... PECVD oxide films . Their composition was slightly changed after CMP as can be seen by the minor increase in the RI . A layer of Si - Rich oxide ( SRO ) was found to have a stabilizing effect on the FSG film during CMP and post CMP ...
... PECVD oxide films . Their composition was slightly changed after CMP as can be seen by the minor increase in the RI . A layer of Si - Rich oxide ( SRO ) was found to have a stabilizing effect on the FSG film during CMP and post CMP ...
Page 184
... PECVD and HDPCVD FSG films . These values agree with previously published data [ 1,2,3 ] . Table I. Summary of ... PECVD 4 ) High 02 : TEOS ratio SiF4 - doped PECVD We have quantified the fluorine stability of SiF4 - doped FSG by ...
... PECVD and HDPCVD FSG films . These values agree with previously published data [ 1,2,3 ] . Table I. Summary of ... PECVD 4 ) High 02 : TEOS ratio SiF4 - doped PECVD We have quantified the fluorine stability of SiF4 - doped FSG by ...
Page 185
... PECVD films were not degraded . These results , which are consistent with the FT - IR fluorine stability data ... PECVD SIF4 3 % 0.7 3 1.0 1.1 1.2 2.2 67 ( low O2 : TEOS ) PECVD SIF4 3 % 0.7 6 1.0 1.2 1.0 1.2 0 ( high O2 : TEOS ) HDPCVD ...
... PECVD films were not degraded . These results , which are consistent with the FT - IR fluorine stability data ... PECVD SIF4 3 % 0.7 3 1.0 1.1 1.2 2.2 67 ( low O2 : TEOS ) PECVD SIF4 3 % 0.7 6 1.0 1.2 1.0 1.2 0 ( high O2 : TEOS ) HDPCVD ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber