Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 14
Page 35
INTERCONNECT PROCESS TECHNOLOGY USING
PERFLUOROCYCLOBUTANE ( PFCB ) P . H . TOWNSEND , E . O . Shaffer , M .
E . Mills , J . Blackson , and M . J . Radler The Dow Chemical Company , M . E .
Pruitt Research Center ...
INTERCONNECT PROCESS TECHNOLOGY USING
PERFLUOROCYCLOBUTANE ( PFCB ) P . H . TOWNSEND , E . O . Shaffer , M .
E . Mills , J . Blackson , and M . J . Radler The Dow Chemical Company , M . E .
Pruitt Research Center ...
Page 38
due to the composite Ta / PFCB film is the sum of the partial curvatures due to
each of the individual layers [ 2 ] . The stress of the PFCB , and hence partial
curvature of the wafer due to the PFCB , is positive during the heating transient ...
due to the composite Ta / PFCB film is the sum of the partial curvatures due to
each of the individual layers [ 2 ] . The stress of the PFCB , and hence partial
curvature of the wafer due to the PFCB , is positive during the heating transient ...
Page 39
Figure 5 shows a TEM cross section of the Cr / PFCB composite after cycling to
390 °C . The PFCB film remains transparent to the electron beam . The Cr film
retains integrity on the PFCB . The presence of Cr within the PFCB was not
detected ...
Figure 5 shows a TEM cross section of the Cr / PFCB composite after cycling to
390 °C . The PFCB film remains transparent to the electron beam . The Cr film
retains integrity on the PFCB . The presence of Cr within the PFCB was not
detected ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel