Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 38
... PFCB , and hence partial curvature of the wafer due to the PFCB , is positive during the heating transient , tending to O at the cure temperature of the PFCB - 300 ° C . The negative initial value of the total curvature results from the ...
... PFCB , and hence partial curvature of the wafer due to the PFCB , is positive during the heating transient , tending to O at the cure temperature of the PFCB - 300 ° C . The negative initial value of the total curvature results from the ...
Page 39
... PFCB composite after cycling to 390 ° C . The PFCB film remains transparent to the electron beam . The Cr film retains integrity on the PFCB . The presence of Cr within the PFCB was not detected with EDS , even in the region close to ...
... PFCB composite after cycling to 390 ° C . The PFCB film remains transparent to the electron beam . The Cr film retains integrity on the PFCB . The presence of Cr within the PFCB was not detected with EDS , even in the region close to ...
Page 178
... ( PFCB ) 12-16 . MATERIAL PROPERTIES BCB is a Si - containing , non - flourinated polymer , while both FLARE and PFCB are flourinated . Each of these materials are easily applied by spin - coating ; FLARE and PFCB requiring an adhesion ...
... ( PFCB ) 12-16 . MATERIAL PROPERTIES BCB is a Si - containing , non - flourinated polymer , while both FLARE and PFCB are flourinated . Each of these materials are easily applied by spin - coating ; FLARE and PFCB requiring an adhesion ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber