Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 85
ABSTRACT Polytetrafluoroethylene ( PTFE ) has been studied as a low dielectric
constant material for ULSI . A novel nanoparticle dispersion of PTFE was
developed that permits the spin - coat deposition of PTFE with a thickness range
of 0 .
ABSTRACT Polytetrafluoroethylene ( PTFE ) has been studied as a low dielectric
constant material for ULSI . A novel nanoparticle dispersion of PTFE was
developed that permits the spin - coat deposition of PTFE with a thickness range
of 0 .
Page 88
Gore has developed a thermal shock test for adhesion . This test was devised to
simulate a worst - case condition in wafer processing . In this test , a silicon wafer
is coated as follows : lum SiO2 , 1 um PTFE , and lum SiO2 . The wafer is then ...
Gore has developed a thermal shock test for adhesion . This test was devised to
simulate a worst - case condition in wafer processing . In this test , a silicon wafer
is coated as follows : lum SiO2 , 1 um PTFE , and lum SiO2 . The wafer is then ...
Page 89
The dielectric constant of PTFE should be about 2 . 0 . We believe the difference
to be caused by uncertainty in the measurement of the film thickness . Another
possibility is the presence of porosity in the film . This is regarded as unlikely ...
The dielectric constant of PTFE should be about 2 . 0 . We believe the difference
to be caused by uncertainty in the measurement of the film thickness . Another
possibility is the presence of porosity in the film . This is regarded as unlikely ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel