Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 85
... PTFE was developed that permits the spin - coat deposition of PTFE with a thickness range of 0.2 to 1.5 μm . These PTFE nanoemulsions are aqueous emulsions containing sub - 50 nm size PTFE particles and surfactant that are ...
... PTFE was developed that permits the spin - coat deposition of PTFE with a thickness range of 0.2 to 1.5 μm . These PTFE nanoemulsions are aqueous emulsions containing sub - 50 nm size PTFE particles and surfactant that are ...
Page 88
... PTFE . This may be attributed to the low modulus of PTFE . Wafers that passed the thermal shock test had a stud pull test value of less than 100 psi . We have conducted limited 90 ° peel testing . This requires the deposition of a ...
... PTFE . This may be attributed to the low modulus of PTFE . Wafers that passed the thermal shock test had a stud pull test value of less than 100 psi . We have conducted limited 90 ° peel testing . This requires the deposition of a ...
Page 89
... PTFE film . Processing The weight change rate for PTFE films in sulfuric acid , buffered HF , and positive photoresist developer is essentially zero . The films may be etched in an oxygen plasma system . NDL has measured an etch rate of ...
... PTFE film . Processing The weight change rate for PTFE films in sulfuric acid , buffered HF , and positive photoresist developer is essentially zero . The films may be etched in an oxygen plasma system . NDL has measured an etch rate of ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber