Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 8
... Parylene F Parylene N is poly ( p - xylylene ) and Parylene F is a fluorinated analogue , poly ( a , a , a , a ' - tetrafluoro - p - xylylene ) , in which all of the methylene units are replaced with difluoromethylene units : CH2 CH2 听 ...
... Parylene F Parylene N is poly ( p - xylylene ) and Parylene F is a fluorinated analogue , poly ( a , a , a , a ' - tetrafluoro - p - xylylene ) , in which all of the methylene units are replaced with difluoromethylene units : CH2 CH2 听 ...
Page 23
... parylene AF - 4 . The overall reaction scheme is also shown in Figure 1. Figure 2 shows the deposition rate of Parylene AF - 4 as a function of the wafer temperature , for two different vaporizer temperature . We have obtained ...
... parylene AF - 4 . The overall reaction scheme is also shown in Figure 1. Figure 2 shows the deposition rate of Parylene AF - 4 as a function of the wafer temperature , for two different vaporizer temperature . We have obtained ...
Page 26
... parylene AF - 4 thin films by thermal gravimetric analysis ( TGA ) . In the past , efforts have been made to evaluate thermal stability of parylene AF - 4 thick free standing films . 18 17 Chow et al.16 determined thermal stability of ...
... parylene AF - 4 thin films by thermal gravimetric analysis ( TGA ) . In the past , efforts have been made to evaluate thermal stability of parylene AF - 4 thick free standing films . 18 17 Chow et al.16 determined thermal stability of ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber