Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 38
Page 12
... S . - Y . Oh , G . Ray , and R . Kumar , Proc . of the U . C . Berkeley Advanced
Metalization and Interconnect Systems for ULSI Applications Conference , Oct . 3
- 5 , 1995 , Portland , OR ; ( b ) C . H . Ting and T . E . Seidel in MRS Proc .
... S . - Y . Oh , G . Ray , and R . Kumar , Proc . of the U . C . Berkeley Advanced
Metalization and Interconnect Systems for ULSI Applications Conference , Oct . 3
- 5 , 1995 , Portland , OR ; ( b ) C . H . Ting and T . E . Seidel in MRS Proc .
Page 13
B . C . Auman , Proc . 1st . Intl . Dielectrics for VLSI / ULSI Multilevel Interconnect
Conference ( DUMIC ) , Feb . 21 - 22 , 1995 , Santa Clara , CA , p . 295 , and ref .
1 - 5 therein . 12 . T . S . Kuan , “ Low ε ILDs for High Performance Interconnects ”
...
B . C . Auman , Proc . 1st . Intl . Dielectrics for VLSI / ULSI Multilevel Interconnect
Conference ( DUMIC ) , Feb . 21 - 22 , 1995 , Santa Clara , CA , p . 295 , and ref .
1 - 5 therein . 12 . T . S . Kuan , “ Low ε ILDs for High Performance Interconnects ”
...
Page 14
G . - R . Yang , B . Wang , T . - M . Lu , and J . F . McDonald , Proc . 2nd Intl .
DUMIC Conf . , p . 214 - 221 , Feb . 20 - 21 , 1996 , Santa Clara , CA . 25 . J .
Wary , R . A . Olson and W . F . Beach , Proc . 2nd Intl . DUMIC Conf . , p . 207 -
213 , Feb .
G . - R . Yang , B . Wang , T . - M . Lu , and J . F . McDonald , Proc . 2nd Intl .
DUMIC Conf . , p . 214 - 221 , Feb . 20 - 21 , 1996 , Santa Clara , CA . 25 . J .
Wary , R . A . Olson and W . F . Beach , Proc . 2nd Intl . DUMIC Conf . , p . 207 -
213 , Feb .
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel