Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page iii
... Research Corporation Fremont , California , U.S.A. Anthony C. Jones Epichem , Ltd. Wirral Merseyside , United Kingdom MRS MATERIALS RESEARCH SOCIETY PITTSBURGH , PENNSYLVANIA ummu тк 7871 12681 1996 bks Single article reprints from.
... Research Corporation Fremont , California , U.S.A. Anthony C. Jones Epichem , Ltd. Wirral Merseyside , United Kingdom MRS MATERIALS RESEARCH SOCIETY PITTSBURGH , PENNSYLVANIA ummu тк 7871 12681 1996 bks Single article reprints from.
Page ix
... research and development is still ahead . André Lagendijk Helmuth Treichel Kevin J. Uram Anthony C. Jones May 1997 MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS Volume 420— Amorphous Silicon Technology ix Preface CONTENTS.
... research and development is still ahead . André Lagendijk Helmuth Treichel Kevin J. Uram Anthony C. Jones May 1997 MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS Volume 420— Amorphous Silicon Technology ix Preface CONTENTS.
Page 195
... Research Center , P.O.Box 218 , Route 134 , Yorktown Heights , NY 10598 ABSTRACT Hydrogen silsesquioxane spin - on - glass ( SOG ) is regarded as a potential low - k material for multilevel metallization ( MLM ) schemes . In this work ...
... Research Center , P.O.Box 218 , Route 134 , Yorktown Heights , NY 10598 ABSTRACT Hydrogen silsesquioxane spin - on - glass ( SOG ) is regarded as a potential low - k material for multilevel metallization ( MLM ) schemes . In this work ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber