Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 8
Page 91
... film thickness and film porosity . Nanoglass has now developed a new process ... ( SOG's ) and fluorinated plasma CVD SiO2 with K of > 3 . A number of polymers ... SOG's and CVD SiO , and because of the ability to carefully control pore ...
... film thickness and film porosity . Nanoglass has now developed a new process ... ( SOG's ) and fluorinated plasma CVD SiO2 with K of > 3 . A number of polymers ... SOG's and CVD SiO , and because of the ability to carefully control pore ...
Page 93
... film . The process is similar to that employed for SOG's and is shown on the left hand side of Figure 2. Depending upon precursor rheology , reaction chemistry and processing conditions , the film thickness may be limited to ...
... film . The process is similar to that employed for SOG's and is shown on the left hand side of Figure 2. Depending upon precursor rheology , reaction chemistry and processing conditions , the film thickness may be limited to ...
Page 196
EXPERIMENTAL All films were spun onto Si substrates using a state - of - the - art SOG clean track . Bake sequences to evaporate the solvent and to reflow the film were run in accordance with the manufacturer's recommendations . Care ...
EXPERIMENTAL All films were spun onto Si substrates using a state - of - the - art SOG clean track . Bake sequences to evaporate the solvent and to reflow the film were run in accordance with the manufacturer's recommendations . Care ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films