Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 38
... section after anneal at 350 ° C 0.1 um Figure 4 shows a TEM cross section of the Ta / PFCB composite after the thermal cycle to 350 ° C . The PFCB , which is normally quite transparent to the electron flux , is now opaque , and the Ta ...
... section after anneal at 350 ° C 0.1 um Figure 4 shows a TEM cross section of the Ta / PFCB composite after the thermal cycle to 350 ° C . The PFCB , which is normally quite transparent to the electron flux , is now opaque , and the Ta ...
Page 39
... section of the Cr / PFCB composite after cycling to 390 ° C . The PFCB film remains transparent to the electron beam . The Cr film retains integrity on the PFCB . The presence of Cr within the PFCB was not detected with EDS , even in ...
... section of the Cr / PFCB composite after cycling to 390 ° C . The PFCB film remains transparent to the electron beam . The Cr film retains integrity on the PFCB . The presence of Cr within the PFCB was not detected with EDS , even in ...
Page 89
... section of PTFE deposited between aluminum lines with an oxide cap . The PTFE was deposited in a single pass to a thickness of about 0.2 μm above the lines and 0.5 um in the field area . The PTFE was then etched back 0.2 μm using an ...
... section of PTFE deposited between aluminum lines with an oxide cap . The PTFE was deposited in a single pass to a thickness of about 0.2 μm above the lines and 0.5 um in the field area . The PTFE was then etched back 0.2 μm using an ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber