Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 111
... Si- F bonds on the properties of Si - O - Si groups that are back - bonded to the Si atom of the Si - F group . These calculations provide a theoretical framework for understanding how relatively low concentrations of F atoms produce ...
... Si- F bonds on the properties of Si - O - Si groups that are back - bonded to the Si atom of the Si - F group . These calculations provide a theoretical framework for understanding how relatively low concentrations of F atoms produce ...
Page 112
... Si - F2 bonding arrangements in alloys with up to about 12 at . % F in the published literature [ 4 ] . In this context , Hayasaka , et al . in Ref . 4 have suggested that the development of low and high wavenumber sidebands on the 940 ...
... Si - F2 bonding arrangements in alloys with up to about 12 at . % F in the published literature [ 4 ] . In this context , Hayasaka , et al . in Ref . 4 have suggested that the development of low and high wavenumber sidebands on the 940 ...
Page 114
... Si F SiO4 tetrahedra distorted tetrahedra with terminal F bridging oxygens Fig . 2. Local molecular structures in Si - O - F alloys . Bonds / Si - atom ( Si - X / Si ) 3 2 Si - O bonds Si - F bonds 0 0.2 0.4 0.7 0.6 Atomic Fraction 0.5 [ O ] ...
... Si F SiO4 tetrahedra distorted tetrahedra with terminal F bridging oxygens Fig . 2. Local molecular structures in Si - O - F alloys . Bonds / Si - atom ( Si - X / Si ) 3 2 Si - O bonds Si - F bonds 0 0.2 0.4 0.7 0.6 Atomic Fraction 0.5 [ O ] ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films