Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 111
... Si- F bonds on the properties of Si - O - Si groups that are back - bonded to the Si atom of the Si - F group . These calculations provide a theoretical framework for understanding how relatively low concentrations of F atoms produce ...
... Si- F bonds on the properties of Si - O - Si groups that are back - bonded to the Si atom of the Si - F group . These calculations provide a theoretical framework for understanding how relatively low concentrations of F atoms produce ...
Page 112
... Si - F2 bonding arrangements in alloys with up to about 12 at . % F in the published literature [ 4 ] . In this context , Hayasaka , et al . in Ref . 4 have suggested that the development of low and high wavenumber sidebands on the 940 ...
... Si - F2 bonding arrangements in alloys with up to about 12 at . % F in the published literature [ 4 ] . In this context , Hayasaka , et al . in Ref . 4 have suggested that the development of low and high wavenumber sidebands on the 940 ...
Page 114
... Si F SiO4 tetrahedra distorted tetrahedra with terminal F bridging oxygens Fig . 2. Local molecular structures in Si - O - F alloys . Bonds / Si - atom ( Si - X / Si ) 3 2 Si - O bonds Si - F bonds 0 0.2 0.4 0.7 0.6 Atomic Fraction 0.5 [ O ] ...
... Si F SiO4 tetrahedra distorted tetrahedra with terminal F bridging oxygens Fig . 2. Local molecular structures in Si - O - F alloys . Bonds / Si - atom ( Si - X / Si ) 3 2 Si - O bonds Si - F bonds 0 0.2 0.4 0.7 0.6 Atomic Fraction 0.5 [ O ] ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber