Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 156
... SiDLC film should become negligible . The etched depth of SiDLC needed to produce an efficient etch - stop SiO2 layer would be expected to decrease as the SiDLC bulk Si content increases . The present paper describes DLC and FDLC films ...
... SiDLC film should become negligible . The etched depth of SiDLC needed to produce an efficient etch - stop SiO2 layer would be expected to decrease as the SiDLC bulk Si content increases . The present paper describes DLC and FDLC films ...
Page 161
... SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer of the SiDLC film with increasing ...
... SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in Figure 9. Figure 10 also shows that the Si concentration increases in the surface layer of the SiDLC film with increasing ...
Page 162
... SiDLC . This can be seen in Fig . 12 which shows Si 2p XPS spectra for the samples etched for 1.2 min . The figure shows that the relative strength of the non - oxidized Si shoulder increases with SiDLC Si content . However , the ...
... SiDLC . This can be seen in Fig . 12 which shows Si 2p XPS spectra for the samples etched for 1.2 min . The figure shows that the relative strength of the non - oxidized Si shoulder increases with SiDLC Si content . However , the ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber