Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 49
Page 118
... SiO2 materials : ( i ) development of an SiO2 network structure with subsequent attack by F , or ( ii ) the development of the Si - O - F network directly . The major effects of the added F atoms on the SiO2 network as exemplified by ...
... SiO2 materials : ( i ) development of an SiO2 network structure with subsequent attack by F , or ( ii ) the development of the Si - O - F network directly . The major effects of the added F atoms on the SiO2 network as exemplified by ...
Page 168
... SiO2 layer over the a - C : F film to protect it from the oxygen plasma and during the CMP process . The SiO2 film was grown from SiH4 + 02 mixtures by the same helicon - wave PECVD method . The flow rates of O2 and SiH4 were 100 sccm ...
... SiO2 layer over the a - C : F film to protect it from the oxygen plasma and during the CMP process . The SiO2 film was grown from SiH4 + 02 mixtures by the same helicon - wave PECVD method . The flow rates of O2 and SiH4 were 100 sccm ...
Page 170
... SiO2 ) . of the SiO2 film will fully protect the a - C : F film . SUMMARY The thermal stability and deposition rate of a - C : F films can be increased by using a C4F8 source gas and helicon - wave plasma - enhanced chemical vapor ...
... SiO2 ) . of the SiO2 film will fully protect the a - C : F film . SUMMARY The thermal stability and deposition rate of a - C : F films can be increased by using a C4F8 source gas and helicon - wave plasma - enhanced chemical vapor ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber