Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 118
REACTION PATHWAYS TO FLUORINE ATOM INCORPORATION There are two
possible reaction pathways to F atom incorporation in the SiO2 materials : ( i )
development of an SiO2 network structure with subsequent attack by F , or ( ii )
the ...
REACTION PATHWAYS TO FLUORINE ATOM INCORPORATION There are two
possible reaction pathways to F atom incorporation in the SiO2 materials : ( i )
development of an SiO2 network structure with subsequent attack by F , or ( ii )
the ...
Page 168
The SiO2 film was grown from SiH4 + O2 mixtures by the same helicon - wave
PECVD method . ... In this case , SIO , stoichiometric SiO2 was formed as shown
in a Si 2p XPS depth profile of the interface a - C : H between the a - C : F and
SiO2 ...
The SiO2 film was grown from SiH4 + O2 mixtures by the same helicon - wave
PECVD method . ... In this case , SIO , stoichiometric SiO2 was formed as shown
in a Si 2p XPS depth profile of the interface a - C : H between the a - C : F and
SiO2 ...
Page 170
SEM image of a multi - layer ILD that consists of a a - C : F film , a SiO2 film , and
an adhesion layer ( a - C : H and Si - rich SiO2 ) . of the SiO2 film will fully protect
the a - C : F film . SUMMARY The thermal stability and deposition rate of a - C : F
...
SEM image of a multi - layer ILD that consists of a a - C : F film , a SiO2 film , and
an adhesion layer ( a - C : H and Si - rich SiO2 ) . of the SiO2 film will fully protect
the a - C : F film . SUMMARY The thermal stability and deposition rate of a - C : F
...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel